Reference Only

SI7629DN-T1-GE3

MOSFETs 20V 35A 52W.

Manufacturer:

Mfr Part:
SI7629DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance3.8 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge177 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation52 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time28 ns
Forward Transconductance - Min64 S
Product TypeMOSFETs
Rise Time38 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time35 ns
Part # AliasesSI7629DN-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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