Reference Only
RGWX5TS65GC11
Not Recommended for New Designs
IGBTs
Datasheet
RGWX5TS65GC11 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | TO-247N-3 | |
| Mounting Style | Through Hole | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 650 V | |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Maximum Gate Emitter Voltage | - 30 V, 30 V | |
| Continuous Collector Current at 25 C | 132 A | |
| Pd - Power Dissipation | 348 W | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 175 C | |
| Packaging | Tube | |
| Gate-Emitter Leakage Current | 200 nA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs | |
| Part # Aliases | RGWX5TS65 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Not Available Online
Need this part?
We can help
Contact a Sales Representative
Tube
Pricing not available for this package type
Need pricing?