Reference Only

RGTVX6TS65DGC13

End of Life
IGBTs 2us Short-Circuit Tol 650V 80A FRD Built-in TO-247N Field Stop Trench IGBT

Manufacturer:

Mfr Part:
RGTVX6TS65DGC13

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247GE-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.9 V
Maximum Gate Emitter Voltage30 V
Continuous Collector Current at 25 C144 A
Pd - Power Dissipation404 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
Gate-Emitter Leakage Current200 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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