Reference Only

RD3G03BATTL1

MOSFETs .

Manufacturer:

Mfr Part:
RD3G03BATTL1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance19.1 mOhms
Vgs - Gate-Source Voltage10 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge38 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation56 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time78 ns
Product TypeMOSFETs
Rise Time61 ns
SubcategoryTransistors
Transistor Type1 P - Channel
Typical Turn-Off Delay Time125 ns
Typical Turn-On Delay Time13 ns
Part # AliasesRD3G03BAT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

Application Notes

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Reel

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