Reference Only

MMST3906T146

Not Recommended for New Designs
Bipolar Transistors - BJT GP PNP 40V 200MA

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Mfr Part:
MMST3906T146

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-236-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max40 V
Collector- Base Voltage VCBO40 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage400 mV
Pd - Power Dissipation6.2 W
Gain Bandwidth Product fT250 MHz
Maximum Operating Temperature+ 150 C
SeriesMMST3906
PackagingReel
Continuous Collector Current- 200 mA
DC Collector/Base Gain hfe Min30 at - 100 mA, - 1 V
DC Current Gain hFE Max300 at - 10 mA, - 1 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesMMST3906

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290055
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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