Reference Only

IXYH50N65C3D1

IGBTs .

Manufacturer:

Mfr Part:
IXYH50N65C3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.73 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C132 A
Pd - Power Dissipation600 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max250 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

EDA / CAD Models

0In Stock

Available For Backorder
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Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$7.16$2,148.00
$6.38$3,253.80
$5.97$6,089.40
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