Reference Only

IXTY08N100D2

MOSFETs 8mAmps 1000V.

Manufacturer:

Mfr Part:
IXTY08N100D2

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance21 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge14.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation60 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time48 ns
Forward Transconductance - Min330 mS
Product TypeMOSFETs
Rise Time57 ns
SeriesIXTY08N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 68 Weeks
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(Minimum: 350 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.58$903.00
$2.39$1,338.40
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