Reference Only
IXTN660N04T4
Obsolete
MOSFET Modules 40V/660A TrenchT4 Power MOSFET
Datasheet
IXTN660N04T4 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFET Modules | |
| Technology | Si | |
| Mounting Style | Screw Mount | |
| Package / Case | SOT-227-4 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Id - Continuous Drain Current | 660 A | |
| Rds On - Drain-Source Resistance | 850 uOhms | |
| Vgs - Gate-Source Voltage | - 15 V, + 15 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 1.04 mW | |
| Series | Gen4 | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 260 ns | |
| Product Type | MOSFET Modules | |
| Rise Time | 430 ns | |
| Subcategory | Discrete and Power Modules | |
| Tradename | HiPerFET | |
| Type | Trench | |
| Typical Turn-Off Delay Time | 386 ns | |
| Typical Turn-On Delay Time | 40 ns | |
| Vr - Reverse Voltage | 30 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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