Reference Only

IXTH420N04T2

Obsolete
MOSFETs Trench T2 Power MOSFET

Manufacturer:

Mfr Part:
IXTH420N04T2

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current420 A
Rds On - Drain-Source Resistance2 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge315 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation935 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time155 ns
Forward Transconductance - Min70 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTH420N04
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541900080
TARIC8541900000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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