Reference Only

IXTH13N110

Not Recommended for New Designs
MOSFETs 13 Amps 1100V 0.92 Rds

Manufacturer:

Mfr Part:
IXTH13N110

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.1 kV
Id - Continuous Drain Current13 A
Rds On - Drain-Source Resistance800 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation360 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time36 ns
Forward Transconductance - Min10 S
Product TypeMOSFETs
Rise Time21 ns
SeriesIXTH13N110
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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