Reference Only

IXTA4N60P

Obsolete
MOSFETs 4.0 Amps 600 V 1.9 Ohm Rds

Manufacturer:

Mfr Part:
IXTA4N60P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance2 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation89 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min4.6 S
Product TypeMOSFETs
Rise Time10 ns
SeriesIXTA4N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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Tube

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