Reference Only

IXTA3N110

Not Recommended for New Designs
MOSFETs 3 Amps 1100V 4 Rds

Manufacturer:

Mfr Part:
IXTA3N110

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.1 kV
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance4 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time18 ns
Product TypeMOSFETs
Rise Time15 ns
SeriesIXTA3N110
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

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