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IXSJ25N120R1K

New Product
SiC MOSFETs 1200V 62mOhm 28A at 25C in TO247-4L.

Manufacturer:

Mfr Part:
IXSJ25N120R1K

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseISO247-4L
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current28 A
Rds On - Drain-Source Resistance81 mOhms
Vgs - Gate-Source Voltage- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge49 nC
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time8 ns
Forward Transconductance - Min8.3 S
PackagingTube
Product TypeSiC MOSFETS
ProductPower MOSFETs
Rise Time12 ns
SubcategoryTransistors
Transistor PolarityN-Channel
Transistor Type1 N-Channel
TypeSiC Power MOSFET
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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