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IXSH110N120L3KHV

New Product
SiC MOSFETs 1200V 18mOhm in TO247.

Manufacturer:

Mfr Part:
IXSH110N120L3KHV

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4L
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current112 A
Rds On - Drain-Source Resistance23.4 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge149 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation405 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time11.1 ns
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFETS
Rise Time31.5 ns
SubcategoryTransistors
Transistor PolarityN-Channel
Transistor Type1 N-Channel
TypeSiC MOSFET
Typical Turn-Off Delay Time22.6 ns
Typical Turn-On Delay Time11.2 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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Lead Time: 22 Weeks
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$13.59$6,115.50
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