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IXSH100N120L3KHV

New Product
SiC MOSFETs 1200V 21mOhm in TO247.

Manufacturer:

Mfr Part:
IXSH100N120L3KHV

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4L
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current102 A
Rds On - Drain-Source Resistance27.3 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge130 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation405 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time8.4 ns
PackagingTube
Product TypeSiC MOSFETS
ProductMOSFETS
Rise Time24.5 ns
SubcategoryTransistors
Transistor PolarityN-Channel
Transistor Type1 N-Channel
TypeSiC MOSFET
Typical Turn-Off Delay Time20.5 ns
Typical Turn-On Delay Time6.1 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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Lead Time: 22 Weeks
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$12.59$5,665.50
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