Reference Only

IXFP10N60P

MOSFETs HiPERFET Id10 BVdass600.

Manufacturer:

Mfr Part:
IXFP10N60P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance740 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation200 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time21 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXFP10N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 28 Weeks
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(Minimum: 300 / Multiples: 1)
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$3.11$933.00
$2.63$1,315.00
$2.49$2,490.00
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