Reference Only

IXFM12N100

End of Life
MOSFETs 12 Amps 1000V 1.05 Rds

Manufacturer:

Mfr Part:
IXFM12N100

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-204AE-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance1.05 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time32 ns
Product TypeMOSFETs
Rise Time33 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time62 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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