Reference Only

IXBT6N170

IGBTs 12 Amps 1700V 3.6 Rds.

Manufacturer:

Mfr Part:
IXBT6N170

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C12 A
Pd - Power Dissipation75 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXBT6N170
PackagingTube
Continuous Collector Current Ic Max36 A
Gate-Emitter Leakage Current100 nA
Height5.1 mm
Length16.05 mm
Product TypeIGBTs
SubcategoryTransistors
TradenameBIMOSFET
Width14 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1);Dechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo

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