Reference Only

EMD6FHAT2R

Not Recommended for New Designs
Bipolar Transistors - BJT NPN+PNP SOT-563 4.7kO Input Resist

Manufacturer:

Mfr Part:
EMD6FHAT2R

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
Transistor PolarityNPN, PNP
ConfigurationDual
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current100 mA
Pd - Power Dissipation150 mW
Gain Bandwidth Product fT250 MHz
Maximum Operating Temperature+ 150 C
QualificationAEC-Q101
PackagingReel
Continuous Collector Current100 mA
DC Collector/Base Gain hfe Min100
DC Current Gain hFE Max600
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # AliasesEMD6FHA

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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