Reference Only

3I2323DS-T1-GE3

MOSFETs

Manufacturer:

Mfr Part:
3I2323DS-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current4.7 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge12.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.25 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time48 ns
Product TypeMOSFETs
Rise Time43 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time71 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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