2SD2167T100Q ROHM Semiconductor

2SD2167T100Q

Bipolar Transistors - BJT

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Mfr Part:
2SD2167T100Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max35 V
Collector- Base Voltage VCBO35 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current2 A
Pd - Power Dissipation2 W
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current2 A
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max120 at 500 mA, 3 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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