Reference Only

2SD1963T100

Obsolete
Bipolar Transistors - BJT

Manufacturer:

Mfr Part:
2SD1963T100

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-243-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage450 mV
Maximum DC Collector Current3 A
Pd - Power Dissipation2 W
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min180 at 500 mA, 2 V
DC Current Gain hFE Max560 at 500 mA, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # Aliases2SD1963

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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