H-58 - MOSFETs
3 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SIJH5800E-T1-GE3 TTI: SIJH5800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 80 V | 302 A | 1.35 mOhms, 1.58 mOhms | - 20 V, 20 V | 2 V, 4 V | 103 nC | - 55 C | + 175 C | 333 W | Reel | |||||
0In Stock | Si | Tube | |||||||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 58 A | 40 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube |