H-31 - MOSFETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 100 V | 267 A | 2.55 mOhms | 20 V | 4 V | 95 nC | - 55 C | + 175 C | 471 W | Enhancement |