SP - SiC MOSFETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 75 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement |