NC - SiC MOSFETs
197 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: MXP120A080FL-GE3 TTI: MXP120A080FL-GE3 Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A080FW-GE3 TTI: MXP120A080FW-GE3 Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: Not Available OnlineSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | |||||
0In Stock | SMD/SMT | D3PAK-3 (TO-268-3) | 1.2 kV | 90 A | 34 mOhms | - 20 V, + 20 V | 2 V | - 40 C | + 150 C | ||||||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 56 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | + 175 C | 267 W | Enhancement | SCT3040KW7 | ||||||
Mfr: SCT3105KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs Nch 1200V 24A SiC TO-247N | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 24 A | 137 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | + 175 C | 134 W | Enhancement | SCT3105KL | |||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 29 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 125 W | Enhancement | SCT3080AW7 | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | SCT4026DW7HR | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | SCT4026DW7 | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DEHR | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4013DE | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 55 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | + 175 C | 262 W | Enhancement | |||||||
Mfr: SCT3060ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3060ALHR | ||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | |||||||
Mfr: SCT4036KTWHRTCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 41A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | 0In Stock | SMD/SMT | TSC3PAK-9 | 1 Channel | 1.2 kV | 84 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | - 40 C | + 175 C | Enhancement | AEC-Q101 | |||||
Mfr: SCT4050KTWHRTCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 31A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | 0In Stock | SMD/SMT | TSC3PAK-9 | 1 Channel | 1.2 kV | 73 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | - 40 C | + 175 C | Enhancement | AEC-Q101 | |||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 24 A | 105 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | - 55 C | + 175 C | 134 W | Enhancement | SCT3105KR | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KEHR | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | + 175 C | 262 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 55 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | 262 W | Enhancement | ||||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 100 W | Enhancement | SCT3120AW7 | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | + 175 C | 262 W | Enhancement | |||||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 55 A | 40 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT3040KR | |||||
Mfr: SCT2H12NYTB TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide | Not Available Online | SMD/SMT | TO-268-2 | 1 Channel | 1.7 kV | 4 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 44 W | Enhancement | SCT2H12NY | ||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 24 A | 137 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | + 175 C | 134 W | Enhancement |