SiC MOSFETs
265 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KR | ||||||
Mfr: SCT3120ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | SCT3120AL | |||||
Mfr: MXP120A080FL-GE3 TTI: MXP120A080FL-GE3 Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A080FW-GE3 TTI: MXP120A080FW-GE3 Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FW-GE3 TTI: MXP120A250FW-GE3 Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Mfr: SCT2280KEC TTI: SCT2280KEC ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs MOSFET1200V14A280m OhmSiliconCarbideSiC | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 14 A | 280 mOhms | - 6 V, + 22 V | 1.6 V | 36 nC | - 55 C | + 175 C | 108 W | Enhancement | SCT2280KE | ||||
Mfr: SCT2H12NYTB TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide | Not Available Online | SMD/SMT | TO-268-2 | 1 Channel | 1.7 kV | 4 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 44 W | Enhancement | SCT2H12NY | ||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 27 A | 150 mOhms | - 5 V, + 20 V | 4 V | 63 nC | - 55 C | + 175 C | 156 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | + 175 C | 262 W | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 24 A | 105 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | ||||||
Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | ||||||
Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | ||||||
Not Available Online | |||||||||||||||||||
Mfr: SCT3022ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 93 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | AEC-Q101 | SCT3022ALHR | |||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 110 nC | - 55 C | + 175 C | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 24 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | SCT4062KW7 | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KEHR | ||||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KR | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 650 V | 118 A | 22.1 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | 427 W | Enhancement | AEC-Q101 | SCT3017ALHR | ||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 75 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 267 W | Enhancement | SCT4018KW7 |
