NC - SiC MOSFETs
177 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | ||||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | |||||
Mfr: IXSJ25N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 28 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 52 nC | - 40 C | + 150 C | 75.3 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KR | ||||||
Mfr: IXSH65N120L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 65 A | 52 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | |||||
Mfr: SCT3160KLGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | SCT3160KL | |||||
Mfr: IXSH100N65L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 650 V | 99 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 454 W | Enhancement | |||||
Mfr: SCT3120ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3120ALHR | ||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 1.2 kV | 40 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | Enhancement | ||||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | SCT3060AL | ||||||
Mfr: SCT3040KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 55 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT3040KL | ||||
Mfr: IXSA40N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: IXSH80N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||||
Mfr: SCT3160KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3160KLHR | ||||
Mfr: SCT3080KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KL | ||||
Mfr: SCT3022KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs Nch 1200V 95A SiC TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | SCT3022KL | ||||
Mfr: IXSA80N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
Mfr: SCT3022ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 93 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | SCT3022AL | ||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | |||||
Mfr: SCT2080KEHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 80 mOhms | - 6 V, + 22 V | 1.6 V | 106 nC | - 55 C | + 175 C | 262 W | Enhancement | AEC-Q101 | SCT2080KEHR | |||
Mfr: SCT3030ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT3030AL | ||||
Mfr: IXSH40N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: SCT3080KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 2.7 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3080KLHR |
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