SiC MOSFETs
265 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 22 A | 160 mOhms | - 6 V, + 22 V | 4 V | 62 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 650 V | 70 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | Enhancement | |||||||
Mfr: SCT4090KTWHRTCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 18A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | 0In Stock | SMD/SMT | TSC3PAK-9 | 1 Channel | 750 V | 45 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | - 40 C | + 175 C | Enhancement | AEC-Q101 | |||||
Mfr: SCT2450KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V 10A 450mOhm Silicon Carbide SiC | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 10 A | 450 mOhms | - 6 V, + 22 V | 1.6 V | 27 nC | - 55 C | + 175 C | 85 W | Enhancement | SCT2450KE | ||||
Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | 262 W | Enhancement | AEC-Q101 | SCT3030ALHR | ||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | |||||||
Mfr: MXP120A045FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Not Available Online | |||||||||||||||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 24 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | |||||||
Not Available Online | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 98 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 267 W | Enhancement | SCT4013DW7 |
