SiC MOSFETs
250 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | ROHM Semiconductor | Through Hole | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 40 A | 36 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 150 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 24 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | AEC-Q101 | SCT4062KW7HR | |||||
Mfr: MXP120A045FW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 120 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | - 55 C | + 175 C | 103 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 30 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 55 A | 40 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 24 A | 137 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | + 175 C | 134 W | Enhancement | |||||||
Mfr: MKE11R600DCGFC TTI: Not Assigned IXYS Availability: Not Available OnlineSiC MOSFETs CoolMOS Power Mosfet 600V 15A | Not Available Online | IXYS | Through Hole | ISOPLUS i4-PAC-5 | N-Channel | 1 Channel | 600 V | 15 A | 165 mOhms | - 20 V, + 20 V | 3 V | 40 nC | CoolMOS | ||||||||
Mfr: SCT2080KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs N-Ch MOSFET 1200V Silicon Carbide SiC | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 80 mOhms | - 6 V, + 22 V | 1.6 V | 106 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT2080KE | ||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Littelfuse | ||||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 22 A | 160 mOhms | - 6 V, + 22 V | 4 V | 62 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | 427 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 70 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | Enhancement | |||||||
Mfr: SCT2450KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V 10A 450mOhm Silicon Carbide SiC | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 10 A | 450 mOhms | - 6 V, + 22 V | 1.6 V | 27 nC | - 55 C | + 175 C | 85 W | Enhancement | SCT2450KE | ||||
Mfr: MXP120A045FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | 262 W | Enhancement | AEC-Q101 | SCT3030ALHR |
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