NC - MOSFETs
5,637 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 12,000In Stock60,000 On Order Expected 29-Apr-27 MOSFETs 20V Vds 8V Vgs SOT-23 | 12,000In Stock60,000 On Order Expected 29-Apr-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 21,000In Stock90,000 On Order Expected 24-Jun-30 MOSFETs 40V Vds 20V Vgs SOT-23 | 21,000In Stock90,000 On Order Expected 24-Jun-30 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SI1539CDL-T1-GE3 TTI: SI1539CDL-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs SC70-6 N&P PAIR | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 30 V | 700 mA | 388 mOhms, 890 mOhms | 20 V | 2.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1539CDL-T1-BE3 SI1539CDL-GE3 | |||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 200V 17 Amp | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 500In StockMOSFETs 500V N-CH HEXFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
12,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 50 V | 15 A | 100 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRFZ20PBF-BE3 | |||||
Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 39,000In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 39,000In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRS5800DP-T1-GE3 TTI: SIRS5800DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Channel 80 V (D-S) MOSFET | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 80 V | 265 A | 1.8 mOhms | 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SUD23N06-31-GE3 TTI: SUD23N06-31-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Ch MOSFET 60V 31 mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | |||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 1,500In StockMOSFETs N-CH SINGLE 500V TO247 | 1,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 8,800In StockMOSFETs 100V N-CH HEXFET D2-PAK | 8,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 30,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: SI4804CDY-T1-GE3 TTI: SI4804CDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V 8.0A 3.1W 22mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 22 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4804CDY-GE3 | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 5,000In StockMOSFETs N-Chan 100V 1.5 Amp | 5,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: IRFR9214TRPBF TTI: IRFR9214TRPBF Vishay Semiconductors Availability: 14,000In StockMOSFETs TO252 250V 2.7A P-CH MOSFET | 14,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 600V 1.4 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 18,000In StockMOSFETs N-CH 500V HEXFET MOSFET D-PAK | 18,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 500V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: IRFR220TRPBF TTI: IRFR220TRPBF Vishay Semiconductors Availability: 4,000In StockMOSFETs N-Chan 200V 4.8 Amp | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel |