H-48 - MOSFETs
7 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | - 30 V, 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | - 20 V, 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | - 20 V, 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 275 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 48 A | 32 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 48 A | 65 mOhms | - 20 V, 20 V | 5 V | 38 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube |