NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: IRFR120TRLPBF TTI: IRFR120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRLPBF-BE3 | ||||
Mfr: SUM90N03-2M2P-E3 TTI: SUM90N03-2M2P-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 90A 250W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 30 V | 90 A | 1.8 mOhms | 20 V | 1.5 V | 257 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 100 A | 13.5 mOhms | 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: SIZF906BDT-T1-GE3 TTI: SIZF906BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPR N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5F-8 | N-Channel | 2 Channel | 30 V | 105 A, 257 A | 680 uOhms, 2.1 mOhms | - 16 V, 20 V | 2.2 V | 25 nC, 81 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIZ998DT-T1-GE3 TTI: SIZ998DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 20 A, 60 A | 4.7 mOhms, 2.2 mOhms | - 16 V, 20 V | 1.1 V | 18 nC, 44.3 nC | - 55 C | + 150 C | 20.2 W, 32.9 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFH170N25X3 TTI: IXFH170N25X3 IXYS Availability: 0In StockMOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 170 A | 6.1 mOhms | 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SUP60030E-GE3 TTI: SUP60030E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.8 mOhms | 20 V | 2 V | 141 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7942DP-T1-GE3 TTI: SI7942DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 5.9 A | 49 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7942DP-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60APBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | ||||
Mfr: SI2300DS-T1-GE3 TTI: SI2300DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2300DS-T1-BE3 SI2300DS-GE3 | |||
Mfr: SIA527DJ-T1-GE3 TTI: SIA527DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SC-70 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 41 mOhms | 8 V | 400 mV | 15 nC, 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | ||||
Mfr: IXTK200N10L2 TTI: IXTK200N10L2 IXYS Availability: Not Available OnlineMOSFETs L2 Linear Power MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 2 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | ||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SIHF065N60E-GE3 TTI: SIHF065N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | ||||
Mfr: SI7998DP-T1-GE3 TTI: SI7998DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A, 30 A | 5.3 mOhms, 9.3 mOhms | 20 V | 2.5 V | 17 nC, 32 nC | - 55 C | + 150 C | 22 W, 40 W | Enhancement | TrenchFET | Reel | SI7998DP-GE3 | |||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 |