NC - MOSFETs
5,637 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | 20 V | 5.5 V | 77 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.5 kV | 8 A | 3.6 Ohms | 30 V | 8 V | 250 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.6 mOhms | 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | ||||||
Mfr: IXTK200N10L2 TTI: IXTK200N10L2 IXYS Availability: Not Available OnlineMOSFETs L2 Linear Power MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 2 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | 30 V | 3.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 7.1 mOhms | 20 V | 1.2 V | 58 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR882DP-GE3 | ||||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: Not Available OnlineMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 4.5 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 2 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SISS22DN-T1-GE3 TTI: SISS22DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 90.6 A | 4 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP12N60E-GE3 TTI: SIHP12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHP12N60E-BE3 | ||||
Mfr: SISHA12ADN-T1-GE3 TTI: SISHA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 4.3 mOhms | - 16 V, 20 V | 1.1 V | 29.5 nC | - 55 C | + 150 C | 28 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIZ348DT-T1-GE3 TTI: SIZ348DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A | 7.12 mOhms | - 16 V, 20 V | 1 V | 18.2 nC | - 55 C | + 150 C | 16.7 W | Enhancement | TrenchFET, PowerPAIR | Reel | ||||
Mfr: SIUD406ED-T1-GE3 TTI: SIUD406ED-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds; 8V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 30 V | 500 mA | 1.46 Ohms | 8 V | 400 mV | 600 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF22N60E-GE3 TTI: SIHF22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | ||||
Mfr: SIHH068N60E-T1-GE3 TTI: SIHH068N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 34 A | 68 mOhms | 30 V | 3 V | 80 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | |||||
Mfr: SIR180ADP-T1-RE3 TTI: SIR180ADP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 60V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 137 A | 2.2 mOhms | 20 V | 2 V | 46.2 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel | SIR180ADP | ||||
Mfr: SIJ438DP-T1-GE3 TTI: SIJ438DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 80 A | 1.35 mOhms | - 16 V, 20 V | 2.4 V | 182 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS606BDN-T1-GE3 TTI: SIS606BDN-T1-GE3 Vishay / Siliconix MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 35.3 A | 14.5 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel |