MOSFETs
13,171 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFH340N075T2 TTI: IXFH340N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | 20 V | 4 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120TRPBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: IRF830ASPBF TTI: IRF830ASPBF Vishay Semiconductors Availability: 0In StockMOSFETs 500V N-CH HEXFET MOSFET D2-PA | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: IRFI9620GPBF TTI: IRFI9620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 3A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3 A | 1.5 Ohms | 20 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: SI7112DN-T1-GE3 TTI: SI7112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 17.8A 3.8W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | 12 V | 1.5 V | 18 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7112DN-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
Mfr: SI8425DB-T1-E1 TTI: SI8425DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 9.3 A | 40 mOhms | 10 V | 900 mV | 110 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1442DH-T1-GE3 TTI: SI1442DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 12 V | 4 A | 20 mOhms | 8 V | 1 V | 33 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1442DH-T1-BE3 SI1442DH-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | ||||
Mfr: SIDR170DP-T1-RE3 TTI: SIDR170DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 95A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 4.8 mOhms | 20 V | 1 V | 93 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | SIDR170DP | ||||
Mfr: SIUD406ED-T1-GE3 TTI: SIUD406ED-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds; 8V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 30 V | 500 mA | 1.46 Ohms | 8 V | 400 mV | 600 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM50020E-GE3 TTI: SUM50020E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds TrenchFET TO-263-3 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 120 A | 2.4 mOhms | 20 V | 3 V | 128 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7148DP-T1-GE3 TTI: SI7148DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-GE3 | |||
Mfr: SIJH5700E-T1-GE3 TTI: SIJH5700E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PWRPK 150V 174A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIRA58ADP-T1-RE3 TTI: SIRA58ADP-T1-RE3 Vishay Semiconductors MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube |