MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIA471DJ-T1-GE3 TTI: SIA471DJ-T1-GE3 Vishay Semiconductors MOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 30.3 A | 11.5 mOhms | - 20 V, 16 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 19.2 W | Enhancement | Reel | |||||
Mfr: SIS108DN-T1-GE3 TTI: SIS108DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 16 A | 34 mOhms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SISHA12ADN-T1-GE3 TTI: SISHA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 4.3 mOhms | - 16 V, 20 V | 1.1 V | 29.5 nC | - 55 C | + 150 C | 28 W | Enhancement | PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 3 kV | 2 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | ||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTA1N120P-TRL TTI: IXTA1N120P-TRL IXYS Availability: Not Available OnlineMOSFETs N-CH SINGLE 1200V TO263D2 | Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | - 20 V, 20 V | 2.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | ||||
Mfr: IXTK3N250L TTI: IXTK3N250L IXYS Availability: Not Available OnlineMOSFETs TO264 2.5KV 3A N-CH LINEAR | Not Available Online | Si | Tube | |||||||||||||||||||
Mfr: SISS94DN-T1-GE3 TTI: SISS94DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | N-Channel | 1 Channel | 200 V | 19.5 A | 75 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIDR680DP-T1-RE3 TTI: SIDR680DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT66 9 NCHA N80V | 0In Stock | Si | TrenchFET | Reel | ||||||||||||||||||
Mfr: SIDR680ADP-T1-RE3 TTI: SIDR680ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 80V (D-S) | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 80 V | 137 A | 2.88 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISF06DN-T1-GE3 TTI: SISF06DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 30V(S1-S2) | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 30 V | 101 A | 4.5 mOhms | - 16 V, 20 V | 2.3 V | 30 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | - 20 V, 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | - 30 V, 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF830APBF | |||||
Mfr: SUD20N10-66L-BE3 TTI: SUD20N10-66L-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 100V 35A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 66 mOhms | - 20 V, 20 V | 3 V | 31 nC | - 55 C | + 150 C | 83 W | Enhancement | Reel | SUD20N10-66L-GE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | - 20 V, 20 V | 3 V | 54 nC | - 55 C | + 175 C | 136 W | Enhancement | Reel | SUD50P10-43L-E3 | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Reel | IRF640PBF | |||||
Mfr: IRFL110TRPBF-BE3 TTI: IRFL110TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL110TRPBF | ||||
Mfr: SIHG15N80AE-GE3 TTI: SIHG15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 13A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | IRF9620PBF |