NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA26DP-T1-RE3 TTI: SIRA26DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 30.3 A | 2.15 mOhms | - 12 V, 16 V | 2.5 V | 29 nC | - 55 C | + 150 C | 43.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | - 30 V, 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFR014TRPBF TTI: IRFR014TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR014TRPBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 63 A | 39 mOhms | - 30 V, 30 V | 3 V | 126 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SIHP12N50E-GE3 TTI: SIHP12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | SIHP12N50E-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | - 20 V, 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | ||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7212DN-T1-GE3 TTI: SI7212DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 6.8 A | 36 mOhms | - 12 V, 12 V | 600 mV | 11 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7212DN-GE3 | |||
Mfr: SI7812DN-T1-GE3 TTI: SI7812DN-T1-GE3 Vishay Semiconductors MOSFETs 75V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 75 V | 16 A | 37 mOhms | - 20 V, 20 V | 3 V | 16 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7812DN-GE3 | |||
Mfr: SI7848BDP-T1-GE3 TTI: SI7848BDP-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | - 20 V, 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-GE3 | |||
Mfr: SI4816BDY-T1-E3 TTI: SI4816BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816BDY-E3 | |||
Mfr: SUM70040E-GE3 TTI: SUM70040E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 2.5 V | 120 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | ||||
Mfr: SIZ918DT-T1-GE3 TTI: SIZ918DT-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 16 A, 28 A | 12 mOhms, 3.7 mOhms | - 10 V, 10 V | 1 V, 1.2 V | 14 nC, 67.3 nC | - 55 C | + 150 C | 29 W, 100 W | Enhancement | TrenchFET | Reel | SIZ918DT-GE3 | |||
Mfr: IXFP110N15T2 TTI: IXFP110N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 110 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | - 20 V, 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | - 20 V, 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Reel | ||||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | - 20 V, 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel |
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