MOSFETs
13,171 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHB12N50E-GE3 TTI: SIHB12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | |||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | ||||||
Mfr: SIHG47N60AE-GE3 TTI: SIHG47N60AE-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | 30 V | 4 V | 121 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF720PBF-BE3 | |||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: SIHP15N80AE-GE3 TTI: SIHP15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 13A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 13 A | 304 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 155 C | 156 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SIDR610EP-T1-RE3 TTI: SIDR610EP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 200V 39.6A N-CH MOSFET | 0In Stock | Si | 200 V | 8.9 A | 334 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: SIR680ADP-T1-RE3 TTI: SIR680ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 125 A | 2.88 mOhms | 20 V | 3.5 V | 43 nC, 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: SUD40151EL-GE3 TTI: SUD40151EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 42 A | 12 mOhms | 20 V | 1.5 V | 74.3 nC | - 55 C | + 175 C | 50 W | Enhancement | Reel | |||||
Mfr: SUM40010EL-GE3 TTI: SUM40010EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.6 mOhms | 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: SIHF540S-GE3 TTI: SIHF540S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | 30 V | 3 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | 20 V | 5.5 V | 77 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFIBE20GPBF TTI: IRFIBE20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 800V 1.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.4 A | 6.5 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF710PBF-BE3 | |||||
Mfr: IRF840ALPBF TTI: IRF840ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO262 500V 8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 |