MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFR320TRPBF-BE3 TTI: IRFR320TRPBF-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO252 400V 3.1A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SISA12BDN-T1-GE3 TTI: SISA12BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 24 A | 4.3 mOhms | - 16 V, 20 V | 2.4 V | 10 nC | - 55 C | + 150 C | 4 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 36.7 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.5 A | 19.9 mOhms | - 8 V, 8 V | 1 V | 19.8 nC | - 55 C | + 150 C | 3.29 W | Enhancement | Reel | ||||||
Mfr: SIA4265EDJ-T1-GE3 TTI: SIA4265EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK P CHAN 20V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 7.8 A | 32 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 2.9 W | Enhancement | Reel | |||||
Mfr: SIHG24N80AEF-GE3 TTI: SIHG24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | - 30 V, 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1965DH-T1-GE3 SI1965DH-T1-E3 | |||||
Mfr: SIA938DJT-T1-GE3 TTI: SIA938DJT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 20V | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 4.5 A | 21.5 mOhms | - 8 V, 12 V | 1.5 V | 3.5 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM70030M-GE3 TTI: SUM70030M-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 100V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 150 A | 3.5 mOhms | - 20 V, 20 V | 142.4 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIJA22DP-T1-GE3 TTI: SIJA22DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 25V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 25 V | 201 A | 740 uOhms | - 16 V, 20 V | 2.2 V | 83 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR014PBF-BE3 TTI: IRFR014PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 N CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014PBF | ||||
Mfr: SI1427EDH-T1-BE3 TTI: SI1427EDH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2 A | 165 mOhms | - 8 V, 8 V | 1 V | 21 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1427EDH-T1-GE3 | |||
Mfr: SIJH5100E-T1-GE3 TTI: SIJH5100E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPK 100V N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 100 V | 277 A | 1.89 mOhms | - 20 V, 20 V | 4 V | 85 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||
Mfr: SIR5623DP-T1-RE3 TTI: SIR5623DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 60 V | 37.1 A | 24 mOhms | - 20 V, 20 V | 2.6 V | 21.8 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SIR460DP-T1-GE3 TTI: SIR460DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.7 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR460DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | - 25 V, 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | ||||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | - 8 V, 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4166DY-T1-GE3 TTI: SI4166DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30.5 A | 3.9 mOhms | - 20 V, 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET | Reel | SI4166DY-GE3 | |||
Mfr: SI4943CDY-T1-E3 TTI: SI4943CDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | - 30 V, 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHG11N80AE | |||||
Mfr: SI2399DS-T1-GE3 TTI: SI2399DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2399DS-T1-BE3 | |||
Mfr: SIA477EDJ-T1-GE3 TTI: SIA477EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V 14mOhm@4.5V 12A P-Ch | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11.6 mOhms | - 8 V, 8 V | 1 V | 87 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIJ494DP-T1-GE3 TTI: SIJ494DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 150V Vds 16.1nC Qg Typ | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 150 V | 36.8 A | 19.3 mOhms | - 20 V, 20 V | 2.5 V | 31 nC | - 55 C | + 150 C | 69.4 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI4190BDY-T1-GE3 TTI: SI4190BDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 14.9 mohm a. 10V 14.4 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 17 A | 9.3 mOhms | - 20 V, 20 V | 2.5 V | 62 nC | - 55 C | + 150 C | 8.4 W | Enhancement | Reel |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel