NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA10DDP-T1-GE3 TTI: SIRA10DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds TrenchFET PowePAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 96 A | 3.1 mOhms | - 16 V, 20 V | 2.4 V | 24.1 nC | - 55 C | + 150 C | 43 W | Enhancement | Reel | |||||
Mfr: SIS108DN-T1-GE3 TTI: SIS108DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 16 A | 34 mOhms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: SIJ188DP-T1-GE3 TTI: SIJ188DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 60 V | 92.4 A | 3.85 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIUD406ED-T1-GE3 TTI: SIUD406ED-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds; 8V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 30 V | 500 mA | 1.46 Ohms | - 8 V, 8 V | 400 mV | 600 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3474DV-T1-GE3 TTI: SI3474DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3474DV-T1-BE3 | |||
Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
Mfr: SI3464DV-T1-GE3 TTI: SI3464DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 8 A | 24 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3464DV-T1-BE3 | |||
Mfr: IXFK100N65X2 TTI: IXFK100N65X2 IXYS Availability: Not Available OnlineMOSFETs MOSFET 650V/100A Ultra Junction X2 | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | - 30 V, 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-2 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 4.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
Mfr: SUP90220E-GE3 TTI: SUP90220E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Not Available Online | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | - 20 V, 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | |||||
Mfr: SIS178LDN-T1-GE3 TTI: SIS178LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 70V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 70 V | 45.3 A | 9.5 mOhms | - 20 V, 20 V | 2.5 V | 18.7 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUG80050E-GE3 TTI: SUG80050E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs TO-247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 100 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 165 nC | - 55 C | + 175 C | 500 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 85 A | 17.5 mOhms | - 20 V, 20 V | 2 V | 110 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Reel | SUP85N15-21 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210PBF-BE3 | |||||
Mfr: SUD40N10-25-E3 TTI: SUD40N10-25-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SUD3 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 40 A | 25 mOhms | - 20 V, 20 V | 1 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA416DJ-T1-GE3 TTI: SIA416DJ-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 11.3 A | 68 mOhms | - 20 V, 20 V | 1.6 V | 10 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIZ350DT-T1-GE3 TTI: SIZ350DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A | 6.75 mOhms | - 12 V, 16 V | 1 V | 20.3 nC | - 55 C | + 150 C | 16.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | - 20 V, 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1 mOhms | - 12 V, 16 V | 2.2 V | 55 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHH14N60E-T1-GE3 TTI: SIHH14N60E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 16 A | 220 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel |
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