MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR4406DP-T1-GE3 TTI: SIR4406DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 40V | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 40 V | 78 A | 4.75 mOhms | - 20 V, 20 V | 2.4 V | 23.7 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
Mfr: IRLZ14PBF-BE3 TTI: IRLZ14PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 10 V, 10 V | 2 V | 8.4 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRLZ14PBF | ||||
Mfr: IXFT220N20X3HV TTI: IXFT220N20X3HV IXYS Availability: 0In StockMOSFETs TO268 200V 220A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SO-8 | 1 Channel | 60 V | 8 A | 29 mOhms | - 20 V, 20 V | 3 V | 11 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | - 20 V, 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | - 15 V, 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | ||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | - 20 V, 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | - 20 V, 20 V | 2 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 40.5 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | ||||||
Mfr: SISS50DN-T1-GE3 TTI: SISS50DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 45-V (D-S) MOSFET N-CHANNEL PowerPAK | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 45 V | 108 A | 2.83 mOhms | - 16 V, 20 V | 2.3 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 15.4 A | 14 mOhms | - 8 V, 8 V | 1 V | 66 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | |||||||
Mfr: IRFU9214PBF TTI: IRFU9214PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 250V 2.7 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SI4386DY-T1-E3 TTI: SI4386DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | - 20 V, 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-E3 | ||||
Mfr: IRFPE30PBF TTI: IRFPE30PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 800V 4.1A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF9Z14STRLPBF TTI: IRF9Z14STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 P CHAN 60V | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel | |||||
Mfr: IRFR430ATRPBF TTI: IRFR430ATRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 500V 5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | - 30 V, 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Reel | |||||
Mfr: SI7880ADP-T1-E3 TTI: SI7880ADP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 40A 83W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | - 20 V, 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-E3 | |||
Mfr: SI4464DY-T1-E3 TTI: SI4464DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4464DY-T1 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube |
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