MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 110 A | 9.5 mOhms | - 20 V, 20 V | 2 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SUM65N20-30-E3 TTI: SUM65N20-30-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V 65A 375W 30mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 65 A | 30 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM65N20-30 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.5 A | 1 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF730PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 3 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | - 30 V, 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 60 A | 140 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | - 20 V, 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI7430DP-T1-E3 TTI: SI7430DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 26 A | 45 mOhms | - 20 V, 20 V | 3.5 V | 43 nC | - 55 C | + 150 C | 64 W | Enhancement | TrenchFET | Reel | SI7430DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 9 mOhms | - 20 V, 20 V | 2 V | 190 nC | - 55 C | + 175 C | 300 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
Mfr: IRFR9110TRPBF TTI: IRFR9110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 3.1A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | - 20 V, 20 V | 4 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF644PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | - 25 V, 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | ||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
Mfr: IRFU9214PBF TTI: IRFU9214PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 250V 2.7 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRF9Z14PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRFZ24PBF-BE3 | |||||
Mfr: IRFR9214PBF TTI: IRFR9214PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 250V 2.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | - 25 V, 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 |