NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS176LDN-T1-GE3 TTI: SIS176LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 70V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 70 V | 42.3 A | 10.9 mOhms | - 12 V, 12 V | 1.6 V | 12.6 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 11.3 A | 19.5 mOhms | - 20 V, 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 4.5 W | Enhancement | Reel | ||||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | ||||||
Mfr: IRLZ44STRRPBF TTI: IRLZ44STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 N CHAN 60V | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SUP85N10-10-E3 TTI: SUP85N10-10-E3 Vishay Semiconductors Availability: 0In StockMOSFETs TO220 100V 85A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR870DP-T1-GE3 TTI: SIR870DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 100-V(D-S) | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5 mOhms | - 20 V, 20 V | 1.2 V | 84 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: IRF9610STRRPBF TTI: IRF9610STRRPBF Vishay / Siliconix Availability: 0In StockMOSFETs TO263 200V 1.8A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.3 A | 1.1 Ohms | - 30 V, 30 V | 2 V | 32 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | SIHP4N80E-GE3 | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 8.3 A | 29.2 mOhms | - 20 V, 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2318CDS-T1-BE3 TTI: SI2318CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N CHAN 40V | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2318CDS-T1-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | - 20 V, 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | ||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | - 20 V, 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SIHP12N60E-E3 TTI: SIHP12N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHP12N60E-BE3 | ||||
Mfr: SIRA14BDP-T1-GE3 TTI: SIRA14BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: SIDR626LDP-T1-RE3 TTI: SIDR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 60V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 204 A | 1.2 mOhms | - 20 V, 20 V | 2.5 V | 89 nC | - 55 C | + 155 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISF02DN-T1-GE3 TTI: SISF02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 25V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIRA28BDP-T1-GE3 TTI: SIRA28BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 38 A | 7.5 mOhms | - 16 V, 20 V | 1.2 V | 14 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube |
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