MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 3 kV | 2 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | ||||||||
Mfr: SIHH068N60E-T1-GE3 TTI: SIHH068N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 34 A | 68 mOhms | - 30 V, 30 V | 3 V | 80 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | |||||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI1078X-T1-GE3 TTI: SI1078X-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 1 Channel | 30 V | 1.02 A | 142 mOhms | - 12 V, 12 V | 600 mV | 6 nC | - 55 C | + 150 C | 240 mW | Enhancement | Reel | |||||
Mfr: SUG90090E-GE3 TTI: SUG90090E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 100 A | 7.9 mOhms | - 20 V, 20 V | 2 V | 129 nC | - 55 C | + 175 C | 395 W | Enhancement | Reel | |||||
Mfr: SUP40010EL-GE3 TTI: SUP40010EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 120 A | 1.47 mOhms | - 20 V, 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: SI3430DV-T1-E3 TTI: SI3430DV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs TSOP6 100V 2.4A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 2.4 A | 170 mOhms | - 20 V, 20 V | 2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | TrenchFET | Reel | SI3430DV-T1-BE3 SI3430DV-E3 | |||
Mfr: SI7114DN-T1-E3 TTI: SI7114DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 18.3A 3.8W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 18.3 A | 7.5 mOhms | - 20 V, 20 V | 3 V | 12.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7114DN-T1 | |||
Mfr: SI7336ADP-T1-E3 TTI: SI7336ADP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 30A 5.4W 3.0mohm @10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 3 mOhms | - 20 V, 20 V | 1 V | 36 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7336ADP-T1 | |||
Mfr: SI7439DP-T1-E3 TTI: SI7439DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | - 20 V, 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRF520PBF-BE3 | |||||
Mfr: IRFP244PBF TTI: IRFP244PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 250V 15A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 15 A | 280 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRL640PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60APBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR110PBF-BE3 | |||||
Mfr: SI7852DP-T1-E3 TTI: SI7852DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-E3 | |||
Mfr: SI7892BDP-T1-E3 TTI: SI7892BDP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 25A 0.0042Ohm | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 15 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7892BDP-E3 | |||
Mfr: SI8409DB-T1-E1 TTI: SI8409DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 6.3 A | 65 mOhms | - 12 V, 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 2.77 W | Enhancement | TrenchFET | Reel | SI8409DB-E1 |
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