NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Reel | IRF640PBF | |||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL110TRPBF | |||||
0In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | |||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840LCPBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRF520PBF-BE3 | |||||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH 400V HEXFET MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRL640PBF-BE3 | |||||
Mfr: IRFBF20PBF TTI: IRFBF20PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBF20PBF-BE3 | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF710PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
Mfr: CPC3981ZTR TTI: CPC3981ZTR IXYS Availability: 0In StockMOSFETs N-CH DEP MOSFET 800V 45 Oh SOT-223-2L TR | 0In Stock | Si | SMD/SMT | SOT-223-2 | N-Channel | 1 Channel | 800 V | 100 mA | 32.5 Ohms | 15 V | - 55 C | + 150 C | 2.25 W | Depletion | Reel | |||||||
Mfr: SIHB5N80AE-GE3 TTI: SIHB5N80AE-GE3 Vishay Availability: 0In StockMOSFETs TO263 800V 4.4A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SISS4410DN-T1-GE3 TTI: SISS4410DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 40 V | 36 A | 9 mOhms | - 16 V, 20 V | 2.4 V | 5.3 nC | - 55 C | + 150 C | 19.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.8 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
Mfr: IRFBC20PBF TTI: IRFBC20PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 2.2A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2.2 A | 4.4 Ohms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFBC20PBF-BE3 | ||||
Mfr: IRFU210PBF TTI: IRFU210PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 200V 2.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SIR5712DP-T1-GE3 TTI: SIR5712DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 18 A | 55.5 mOhms | 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 45.9 A | 8.9 mOhms | 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 33.7 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840APBF | |||||
Mfr: SIHB33N60ET1-GE3 TTI: SIHB33N60ET1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 600V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SI4420BDY-T1-E3 TTI: SI4420BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 13.5A 0.0085Ohm | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 8.5 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4420BDY-E3 | |||
Mfr: SUM45N25-58-E3 TTI: SUM45N25-58-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V 45A 375W 58mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 45 A | 58 mOhms | 30 V | 2 V | 140 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM45N25-58 |