NC - MOSFETs
5,620 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIZ918DT-T1-GE3 TTI: SIZ918DT-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 16 A, 28 A | 12 mOhms, 3.7 mOhms | - 10 V, 10 V | 1 V, 1.2 V | 14 nC, 67.3 nC | - 55 C | + 150 C | 29 W, 100 W | Enhancement | TrenchFET | Reel | SIZ918DT-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | - 20 V, 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | - 20 V, 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | - 20 V, 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: SI7788DP-T1-GE3 TTI: SI7788DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 50A 69W 3.1mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 3.1 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7788DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | |||||
Mfr: IXFP110N15T2 TTI: IXFP110N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 110 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIJH5800E-T1-GE3 TTI: SIJH5800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 80 V | 302 A | 1.35 mOhms, 1.58 mOhms | - 20 V, 20 V | 2 V, 4 V | 103 nC | - 55 C | + 175 C | 333 W | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF740APBF-BE3 | |||||
Mfr: SIHP24N80AEF-GE3 TTI: SIHP24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | - 30 V, 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: IRFZ14PBF-BE3 TTI: IRFZ14PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRFZ14PBF | ||||
Mfr: SIS5712DN-T1-GE3 TTI: SIS5712DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 150 V | 18 A | 55.5 mOhms | - 20 V, 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 39.1 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF720PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBE20PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBF30PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | - 20 V, 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
Mfr: SIS112LDN-T1-GE3 TTI: SIS112LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | - 20 V, 20 V | 2.5 V | 5.9 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel |