NC - MOSFETs
5,620 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||||
Mfr: IRFR9120TRLPBF TTI: IRFR9120TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 100V 5.6A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9120TRLPBF-BE3 | ||||
Mfr: IRF610PBF-BE3 TTI: IRF610PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 200V 3.3A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF610PBF | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 86 A | 4.15 mOhms | - 20 V, 20 V | 2.4 V | 60.5 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | ||||
Mfr: SIS128LDN-T1-GE3 TTI: SIS128LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWER P AKNC HAN80V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 33.7 A | 20.3 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | - 20 V, 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SISH112DN-T1-GE3 TTI: SISH112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | - 12 V, 12 V | 600 mV | 27 nC | - 50 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | - 20 V, 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG35N60E-GE3 TTI: SIHG35N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 82 mOhms | - 30 V, 30 V | 4 V | 88 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | - 16 V, 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SI2328DS-T1-BE3 TTI: SI2328DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT233 100V 1.15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Reel | SI2328DS-T1-E3 | ||||
Mfr: SI1480BDH-T1-GE3 TTI: SI1480BDH-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.38 A | 212 mOhms | - 20 V, 20 V | 3 V | 3.9 nC | - 55 C | + 150 C | 2.6 W | Enhancement | Reel | |||||
Mfr: SISS32ADN-T1-GE3 TTI: SISS32ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPak-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.3 mOhms | - 20 V, 20 V | 2 V | 24 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | SISS32ADN | ||||
Mfr: IXTH1N200P3HV TTI: IXTH1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-247HV | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 2 kV | 1 A | 40 Ohms | - 20 V, 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SIHH20N50E-T1-GE3 TTI: SIHH20N50E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 500 V | 22 A | 128 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
Mfr: SIR880BDP-T1-RE3 TTI: SIR880BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 70.6 A | 8 mOhms | - 20 V, 20 V | 2.4 V | 66 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFT120N30X3HV TTI: IXFT120N30X3HV IXYS Availability: 0In StockMOSFETs TO268 300V 120A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 100 A | 13.5 mOhms | - 20 V, 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 30 V, 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube |