NC - MOSFETs
5,637 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SQ3418EV-T1-GE3 TTI: SQ3418EV-T1-GE3 Vishay Availability: 546,000In StockMOSFETs TSOP6 N-CH 40V 8A | 546,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIHK075N60EF-T1GE3 TTI: SIHK075N60EF-T1GE3 Vishay Availability: 8,000In StockMOSFETs TOLL 600V 40A E SERIES | 8,000In Stock | Si | 650 V | 33 A | 61 mOhms | 30 V | 5 V | 72 nC | - 55 C | + 150 C | 192 W | Reel | ||||||||||
Mfr: SIHK055N60EF-T1GE3 TTI: SIHK055N60EF-T1GE3 Vishay Availability: 8,000In StockMOSFETs TOLL 600V 40A E SERIES | 8,000In Stock | Si | 650 V | 40 A | 50 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 150 C | 236 W | Reel | ||||||||||
Mfr: SIRS4400DP-T1-RE3 TTI: SIRS4400DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs POWRPK N CHAN 40V | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 40 V | 440 A | 690 uOhms | - 16 V, 20 V | 2.3 V | 90 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: SI2312CDS-T1-GE3 TTI: SI2312CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock108,000 On Order Expected 23-Apr-27 MOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock108,000 On Order Expected 23-Apr-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | |||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4848DY-T1-E3 TTI: SI4848DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40.5 A | 6.7 mOhms | - 16 V, 20 V | 1.1 V | 12.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 27-Sep-30 MOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock3,000 On Order Expected 27-Sep-30 | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | 10 V | 2 V | 8.4 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL014TRPBF-BE3 | |||||
Mfr: SIHB22N60E-GE3 TTI: SIHB22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | |||||
Mfr: SI1016CX-T1-GE3 TTI: SI1016CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel, P-Channel | 2 Channel | 20 V | 350 mA, 500 mA | 396 mOhms, 756 mOhms | 8 V | 400 mV | 1.3 nC, 1.65 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In Stock174,000 On Order Expected MOSFETs POWRPK N CHAN 30V | 0In Stock174,000 On Order Expected | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | |||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In Stock1,600 On Order Expected 08-Apr-27 MOSFETs N-Chan 600V 6.2 Amp | 0In Stock1,600 On Order Expected 08-Apr-27 | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 85 A | 19 mOhms | 20 V | 2 V | 76 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI7850DP-T1-GE3 TTI: SI7850DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-GE3 | |||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 0In Stock500 On Order Expected 07-Oct-27 MOSFETs N-CH 500V HEXFET MOSFET | 0In Stock500 On Order Expected 07-Oct-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel |