MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS112LDN-T1-GE3 TTI: SIS112LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | - 20 V, 20 V | 2.5 V | 5.9 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9020TRPBF TTI: IRFR9020TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 P CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 9.9 A | 280 mOhms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 35.8 A | 2.6 mOhms | - 20 V, 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4186DY-GE3 | ||||
Mfr: IRFU120PBF TTI: IRFU120PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 100V 7.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 2 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF620SPBF TTI: IRF620SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 5.2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 10 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR110PBF-BE3 | |||||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH 400V HEXFET MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 85 V | 44 A | 22 mOhms | - 30 V, 30 V | 4.5 V | 33 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI2333CDS-T1-GE3 TTI: SI2333CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-GE3 | |||
Mfr: SI7942DP-T1-GE3 TTI: SI7942DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 5.9 A | 49 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7942DP-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | - 20 V, 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IXTK40P50P TTI: IXTK40P50P IXYS Availability: Not Available OnlineMOSFETs -40.0 Amps -500V 0.230 Rds | Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | - 20 V, 20 V | 2 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
Mfr: SI5513CDC-T1-GE3 TTI: SI5513CDC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 30 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | - 12 V, 12 V | 600 mV, 1.5 V | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5509DC-T1-GE3 | |||
Mfr: IXFK98N50P3 TTI: IXFK98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 1.05 Ohms | - 30 V, 30 V | 6.5 V | 64 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIB456DK-T1-GE3 TTI: SIB456DK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 100 V | 6.3 A | 153 mOhms | - 20 V, 20 V | 1.6 V | 5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA527DJ-T1-GE3 TTI: SIA527DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SC-70 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 41 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Reel | ||||||
Mfr: SIA923AEDJ-T1-GE3 TTI: SIA923AEDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V .054ohm@-4.5V -4.5A P-CH | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 900 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7852DP-T1-E3 TTI: SI7852DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-E3 |
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