NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840LCPBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRL640PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF | |||||
0In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | |||||||||||
Mfr: SIHG15N80AE-GE3 TTI: SIHG15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 13A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 13 A | 350 mOhms | - 30 V, 30 V | 4 V | 53 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Reel | IRF640PBF | |||||
Mfr: IRFL110TRPBF-BE3 TTI: IRFL110TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL110TRPBF | ||||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH 400V HEXFET MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44RPBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | ||||||
Mfr: SI2342DS-T1-GE3 TTI: SI2342DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 8V Vds 5V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | - 5 V, 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2342DS-T1-BE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | - 30 V, 30 V | 4.5 V | 113 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 2.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | |||||
Mfr: SIR172ADP-T1-GE3 TTI: SIR172ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 24 A | 8.5 mOhms | - 20 V, 20 V | 1.2 V | 44 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1424EDH-T1-GE3 TTI: SI1424EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-BE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: IXFK24N100Q3 TTI: IXFK24N100Q3 IXYS Availability: Not Available OnlineMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 24 A | 440 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR472ADP-T1-GE3 TTI: SIR472ADP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 18 A | 9 mOhms | - 20 V, 20 V | 1.1 V | 28 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 24 A | 270 mOhms | - 30 V, 30 V | 4.5 V | 48 nC | - 55 C | + 150 C | 480 W | Enhancement | Polar2 HiPerFET | Tube |
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