NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRL510PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | - 30 V, 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF820PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ40PBF-BE3 | |||||
Mfr: IRFZ20PBF-BE3 TTI: IRFZ20PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 50 V | 15 A | 100 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | IRFZ20PBF | ||||
Mfr: SUD23N06-31L-T4-E3 TTI: SUD23N06-31L-T4-E3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH 60-V (D-S) 175C Logic Level | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | - 20 V, 20 V | 1 V | 17 nC | - 55 C | + 175 C | 100 W | Enhancement | TrenchFET | Reel | SUD23N06-31L-T4BE3 | |||
Mfr: IRLU110PBF TTI: IRLU110PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLU | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SIR464DP-T1-GE3 TTI: SIR464DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 50A 69W 3.1mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 3.1 mOhms | - 20 V, 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR464DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 250 V | 4.1 A | 150 mOhms | - 20 V, 20 V | 2 V | 10.9 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | ||||||
Mfr: SIR5112DP-T1-RE3 TTI: SIR5112DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK 1212-8S, 14.9 mohm a. 10V 14.4 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 40.7 A | 14.9 mOhms | 10.6 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | ||||||
Mfr: SIHB25N50E-GE3 TTI: SIHB25N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | ||||||
Mfr: SISA14BDN-T1-GE3 TTI: SISA14BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 2.2 V | 14 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
Mfr: SISA10BDN-T1-GE3 TTI: SISA10BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 26 A | 3.6 mOhms | - 16 V, 20 V | 2.4 V | 24.1 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
Mfr: SI4634DY-T1-GE3 TTI: SI4634DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24.5 A | 5.2 mOhms | - 20 V, 20 V | 1.4 V | 68 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4634DY-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 4.3 A | 3.5 Ohms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 1.05 Ohms | - 30 V, 30 V | 6.5 V | 64 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHD14N60E-GE3 TTI: SIHD14N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 13 A | 269 mOhms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHD14N60E-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Reel | ||||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | - 8 V, 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG33N65EF-GE3 TTI: SIHG33N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 31.6 A | 109 mOhms | - 30 V, 30 V | 2 V | 171 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel |
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