NC - MOSFETs
5,620 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM10250E-GE3 TTI: SUM10250E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 250V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 63.5 A | 24.7 mOhms | - 20 V, 20 V | 2 V | 88 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS184DN-T1-GE3 TTI: SIS184DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 65.3 A | 5.8 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 52 W | Enhancement | Reel | |||||
Mfr: SI4896DY-T1-E3 TTI: SI4896DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-E3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | - 20 V, 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | ||||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIR460DP-T1-GE3 TTI: SIR460DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.7 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR460DP-GE3 | |||
Mfr: SI4464DY-T1-E3 TTI: SI4464DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4464DY-T1 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SISA18BDN-T1-GE3 TTI: SISA18BDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8PT | N-Channel | 1 Channel | 30 V | 60 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 6.2 nC | - 55 C | + 150 C | 36.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 220 A | 5.5 mOhms | - 20 V, 20 V | 4.5 V | 157 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | ||||||
Mfr: SIHP15N80AE-GE3 TTI: SIHP15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 13A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 13 A | 304 mOhms | - 30 V, 30 V | 4 V | 35 nC | - 55 C | + 155 C | 156 W | Enhancement | Reel | |||||
Mfr: IRFR310TRPBF-BE3 TTI: IRFR310TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 400V 1.7A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF530PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | - 30 V, 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: SIRA18DDP-T1-GE3 TTI: SIRA18DDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | - 30 V, 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | SIHP22N60AE-GE3 | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 220 mA | 10 Ohms | - 15 V, 15 V | 3.9 V | - 55 C | + 125 C | 1.6 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | ||||
Mfr: SI8810EDB-T2-E1 TTI: SI8810EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.9 A | 72 mOhms | - 8 V, 8 V | 400 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel |