MOSFETs
13,237 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4447ADY-T1-GE3 TTI: SI4447ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 7.2 A | 45 mOhms | 20 V | 1.2 V | 25 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: Not Available OnlineMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFB110N60P3 TTI: IXFB110N60P3 IXYS Availability: Not Available OnlineMOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 110 A | 56 mOhms | 30 V | 5 V | 245 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT110N10L2 TTI: IXTT110N10L2 IXYS Availability: 0In StockMOSFETs Linear Extended FBSOA Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 18 mOhms | 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 4.5 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | |||||
Mfr: SI2301CDS-T1-E3 TTI: SI2301CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | ||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-E3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35 A | 9.5 mOhms | 20 V | 1 V | 26 nC | - 55 C | + 150 C | 37.9 W | Enhancement | TrenchFET | Reel | SI7686DP-E3 | ||||
Mfr: SUP90P06-09L-E3 TTI: SUP90P06-09L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 90A 250W 9.3mohm @ 10V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 90 A | 7.4 mOhms | 20 V | 3 V | 240 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | 20 V | 2.5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube | ||||||
Mfr: IXFB44N100P TTI: IXFB44N100P IXYS Availability: Not Available OnlineMOSFETs 44 Amps 1000V 0.22 Rds | Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 44 A | 220 mOhms | 30 V | 6.5 V | 305 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 300 mOhms | 30 V | 5 V | 160 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: IRFR9220PBF TTI: IRFR9220PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 200V 3.6 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IXFH24N90P TTI: IXFH24N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 24 A | 420 mOhms | 30 V | 6.5 V | 130 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube |