MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIA447DJ-T1-GE3 TTI: SIA447DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | - 8 V, 8 V | 850 mV | 80 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA447DJ-GE3 | |||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | - 20 V, 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | - 20 V, 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | ||||
Mfr: SIHP20N50E-GE3 TTI: SIHP20N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SUM70040E-GE3 TTI: SUM70040E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 2.5 V | 120 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | - 20 V, 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFI9Z14GPBF TTI: IRFI9Z14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 P CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 5.3 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 27 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: IRFI9610GPBF TTI: IRFI9610GPBF Vishay / Siliconix Availability: 0In StockMOSFETs TO220 200V 2A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBF30PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 3 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | - 20 V, 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBE20PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | - 20 V, 20 V | 3.5 V | 80 nC | - 55 C | + 150 C | 463 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.5 kV | 8 A | 3.6 Ohms | - 30 V, 30 V | 8 V | 250 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | ||||||
Mfr: SI4477DY-T1-GE3 TTI: SI4477DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 26.6 A | 6.2 mOhms | - 8 V, 8 V | 600 mV | 125 nC | - 55 C | + 150 C | 6.6 W | Enhancement | TrenchFET | Reel | SI4477DY-GE3 | |||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 11 mOhms | - 20 V, 20 V | 5 V | 265 nC | - 55 C | + 175 C | 1.15 kW | Enhancement | HiPerFET | Tube |
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